Two newer RAM technologies to keep an eye on: Phase change RAM (PRAM) and Nano RAM (NRAM).
PRAM (
http://en.wikipedia.org/wiki/Phase-change_RAM) is based on a special glass that change phases from crystalline to amorphous when heat is applied. It's main advantage is that it can be written to without having to erase the previous contents, reportedly making it up to 30x faster for some operations. The cells are 50% smaller than NOR flash and require 20% fewer processing steps, making them cheaper to produce. Samsung looks to be an early pioneer (
http://www.eetimes.com/news/semi/showArticle.jhtml?articleID=192700709) in the manufacture of this type of chip.
NRAM (
http://en.wikipedia.org/wiki/Nano-RAM) is based on the use of carbon nanotubes that are suspended above an electrode until a voltage is applied across them. This causes them to bend and touch the electrode and let current pass. Nantero (
http://www.nantero.com/index.html) is the chief developer of this technology and has begun filing multiple patents. The advantage here is the density -- only 22nm per memory gate (
http://www.nantero.com/pdf/Release_0406.pdf) vs. the current best 40nm in traditional NAND flash (
http://www.physorg.com/news77205459.html).
Both technologies look promising.